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| Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Diode MMBD4448W FEATURES 1. 25 A0. 05 1. 01 R EF SWITCHING DIODE SOT-323 Power dissipation PD: 200 mW (Tamb=25) 1. 30 A0. 03 2. 30 A0. 05 Collector current 250 mA IO: Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 Unit: mm Marking: KA3 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR unless otherwise specified) Test conditions IR= 10A VR=20V VR=75V IF=5mA IF=10mA IF=100mA IF=150mA MIN 75 0.025 2.5 0.72 0.855 1 1.25 4 4 V MAX UNIT V 0. 30 2. 00 A0. 05 A Forward voltage VF Diode capacitance CD t rr VR=0V, f=1MHz IF=IR=10mA Irr=0.1xIR ,RL=100 pF nS Reverse recovery time Test period <3000s. |
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